IRFB3207ZPBF vs FDP86363-F085 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFB3207ZPBF sa pamamagitan ng Infineon at FDP86363-F085 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
onsemi
FDP86363-F085 - 80V 110A N-Channel PowerTrench MOSFET | onsemi
FDP86363-F085 ⚠ Huling PagbiliPagsanggunian na paghahambing
| Parametro | IRFB3207ZPBF | FDP86363-F085 |
|---|---|---|
| Brand | Infineon | onsemi |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Huling Pagbili |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | PowerTrench (shielded-gate trench) |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | 110 A |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: single-pulse IDM rating] |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | TO-220AB (3-lead through-hole) | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Level ng MSL | N/A (through-hole) | — |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 80 V |
| On-Resistance Rds(on) at Vgs=10V | — | 2.8 mOhm typical |
| On-Resistance Rds(on) max at Vgs=10V | — | [DATA_NEEDED: max Rds(on) at Vgs=10V] |
| Gate Threshold Voltage Vgs(th) | — | [DATA_NEEDED: Vgs(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Junction-to-Case Thermal Resistance RthetaJC | — | 0.5 C/W |
| Junction-to-Ambient Thermal Resistance RthetaJA | — | 62.5 C/W (on 1 in^2 pad of 2oz copper per datasheet) |
| Hanay ng Temperature ng Junction na Operasyon | — | -55C to +175C |
| Package Type | — | TO-220-3 (TO-220AB) |
| Polarity / Channel Type | — | N-Channel |
| Automotive Qualification | — | AEC-Q101 qualified |
| Tindminan RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED: explicit halogen-free claim] |