IRFB3207ZPBF vs FDP86363-F085 比較

詳細並排比較 IRFB3207ZPBF 由 Infineon 與 FDP86363-F085 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

onsemi
FDP86363-F085 FDP86363-F085 - 80V 110A N-Channel PowerTrench MOSFET | onsemi

FDP86363-F085 - 80V 110A N-Channel PowerTrench MOSFET | onsemi

FDP86363-F085 ⚠ 最後購買機會

規格比較

參數 IRFB3207ZPBF FDP86363-F085
品牌 Infineon onsemi
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 最後購買
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) PowerTrench (shielded-gate trench)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A 110 A
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: single-pulse IDM rating]
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
工作接面溫度 -55 C to +175 C —
封裝 TO-220AB (3-lead through-hole) —
安裝類型 Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL 等級 N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
Drain-Source Voltage (V(BR)DSS) — 80 V
On-Resistance Rds(on) at Vgs=10V — 2.8 mOhm typical
On-Resistance Rds(on) max at Vgs=10V — [DATA_NEEDED: max Rds(on) at Vgs=10V]
Gate Threshold Voltage Vgs(th) — [DATA_NEEDED: Vgs(th) min/typ/max]
Power Dissipation (PD) at TC=25C — 300 W
Junction-to-Case Thermal Resistance RthetaJC — 0.5 C/W
Junction-to-Ambient Thermal Resistance RthetaJA — 62.5 C/W (on 1 in^2 pad of 2oz copper per datasheet)
工作接面溫度範圍 — -55C to +175C
Package Type — TO-220-3 (TO-220AB)
Polarity / Channel Type — N-Channel
Automotive Qualification — AEC-Q101 qualified
RoHS 狀態 — Compliant
Lead-Free / Halogen-Free — [DATA_NEEDED: explicit halogen-free claim]

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