IRFB4110PBF vs IRF150P220AKMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4110PBF sa pamamagitan ng Infineon at IRF150P220AKMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB4110PBF IRF150P220AKMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock In Stock —
Presyo ng Yunit (USD) $1.55 —
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A (bond-wire limited) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance RDS(on) max at VGS=10V 4.5 mΩ —
On-Resistance RDS(on) typ at VGS=10V 3.7 mΩ —
Power Dissipation (PD) at TC=25°C 370 W —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging TO-220AB (through-hole) TO-247-3 (PG-TO247-3)
Technology HEXFET (planar DMOS) StrongIRFET
Uri ng Pagpapasok Through Hole Through Hole
Tindminan RoHS Compliant (Pb-free suffix) Compliant
Lead-Free Yes (PBF suffix denotes Pb-free) Yes
Manufacturer — Infineon Technologies
Part Number — IRF150P220AKMA1
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID) at Tc=25C — 203 A
On-Resistance (RDS(on) max) at VGS=10V — 2.7 mOhm
Gate-Source Voltage (VGS max) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Tc=25C — 556 W
Power Dissipation (Pd) at Ta=25C — 3.8 W
Hanay ng Temperature na Operasyon — -55C to +175C
Terminal Finish — Tin (Sn)
JESD-609 Code — e3

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