IRFB4110PBF vs IRF150P220AKMA1 Comparison
Detailed side-by-side comparison of IRFB4110PBF by Infineon and IRF150P220AKMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB4110PBF | IRF150P220AKMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $3.55 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A (bond-wire limited) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΞ© | β |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΞ© | β |
| Power Dissipation (PD) at TC=25Β°C | 370 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | TO-220AB (through-hole) | TO-247-3 (PG-TO247-3) |
| Technology | HEXFET (planar DMOS) | StrongIRFET |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | Compliant (Pb-free suffix) | Compliant |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | Yes |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IRF150P220AKMA1 |
| Drain-Source Voltage (VDS max) | β | 150 V |
| Continuous Drain Current (ID) at Tc=25C | β | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | β | 2.7 mOhm |
| Gate-Source Voltage (VGS max) | β | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (Pd) at Tc=25C | β | 556 W |
| Power Dissipation (Pd) at Ta=25C | β | 3.8 W |
| Operating Temperature Range | β | -55C to +175C |
| Terminal Finish | β | Tin (Sn) |
| JESD-609 Code | β | e3 |