IRFB4310PBF vs IRLB4030PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4310PBF sa pamamagitan ng Infineon at IRLB4030PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB4310PBF IRLB4030PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (StrongIRFET family)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc=25C 130 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Maximum Power Dissition (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max at VGS=10V 7 mOhm 4.3 mOhm
On-Resistance RDS(on) typical at VGS=10V 5.6 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Total Gate Charge (Qg) 170 nC 87 nC
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Hanay ng Temperature na Operasyon -55C to +175C (junction) -55C to +175C
Packhaging TO-220AB (through-hole) TO-220AB
Uri ng Pagpapasok Through Hole Through Hole
Avalanche Rated Yes —
Tindminan RoHS Compliant Compliant
Lead-Free Yes (Pb-free PBF suffix) —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 180 A
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V]
Power Dissipation (PD) at Tc — 370 W
Logic Level Drive — Yes (optimized for 4.5 V to 10 V VGS)
Qualification — JEDEC

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