IRFH5300TRPBF vs IRFH5301TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFH5300TRPBF sa pamamagitan ng Infineon at IRFH5301TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFH5300TRPBF IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRFH5300TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFH5300TRPBF IRFH5301TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 40 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) 336 A —
On-Resistance RDS(on) max at VGS=10V 1.4 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max +/-20 V —
Total Gate Charge (Qg) 50 nC 37 nC (typical)
Power Dissition at TA=25C 3.6 W —
Power Dissipation at TC=25C 250 W —
Hanay ng Temperature na Operasyon -55C to +150C -55C to +150C (junction)
Packhaging PQFN-8 (5x6 mm) PQFN (5x6 mm) Single Die
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET (StrongIRFET) HEXFET (StrongIRFET)
Gate Drive Level Logic-level (5V optimized) —
JEDEC Qualification Yes —
Tindminan RoHS Compliant —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (TA, 25C) — 35 A
Continuous Drain Current (TC, 25C) — 100 A
RDS(on) Max @ VGS=10V — 1.85 mOhm
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (TA) — 3.6 W
Power Dissipation (TC) — 110 W
Gate Drive Logic Level — Optimized for 5 V VGS drive
RoHS / Halogen-Free — RoHS compliant, Halogen-free
Qualification — JEDEC standard

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