IRFH5300TRPBF vs IRFH5301TRPBF 比較
詳細並排比較 IRFH5300TRPBF 由 Infineon 與 IRFH5301TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFH5300TRPBF | IRFH5301TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 40 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | 336 A | — |
| On-Resistance RDS(on) max at VGS=10V | 1.4 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Gate Charge (Qg) | 50 nC | 37 nC (typical) |
| Power Dissition at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 250 W | — |
| 工作溫度範圍 | -55C to +150C | -55C to +150C (junction) |
| 封裝 | PQFN-8 (5x6 mm) | PQFN (5x6 mm) Single Die |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET (StrongIRFET) | HEXFET (StrongIRFET) |
| Gate Drive Level | Logic-level (5V optimized) | — |
| JEDEC Qualification | Yes | — |
| RoHS 狀態 | Compliant | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (TA, 25C) | — | 35 A |
| Continuous Drain Current (TC, 25C) | — | 100 A |
| RDS(on) Max @ VGS=10V | — | 1.85 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (TA) | — | 3.6 W |
| Power Dissipation (TC) | — | 110 W |
| Gate Drive Logic Level | — | Optimized for 5 V VGS drive |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |
| Qualification | — | JEDEC standard |