IRFH8318TRPBF vs IRFR3806TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFH8318TRPBF sa pamamagitan ng Infineon at IRFR3806TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFH8318TRPBF IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΩ | Infineon

IRFH8318TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFH8318TRPBF IRFR3806TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IRFH8318TRPBF —
Technology StrongIRFET™ (N-Channel Trench MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at Ta=25°C 27 A —
Continuous Drain Current (ID) at Tc=25°C 120 A —
On-Resistance RDS(on) max at VGS=10V 3.1 mΩ —
Total Gate Charge (Qg) 41 nC 22 nC
Power Dissipation (Ta) 3.6 W —
Power Dissipation (Tc) 59 W —
Packhaging PQFN 5x6 (SuperSO8, 8-PowerTDFN) —
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55°C to +150°C —
Tindminan RoHS Compliant —
Lead-Free Yes —
Level ng MSL 1 —
Description Synchronous MOSFET for high-frequency buck converters —
Transistor Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Continuous Drain Current (ID) at Tc — 43 A
On-State Resistance RDS(on) max — 15.8 mOhm at VGS = 10 V
Power Dissipation (Pd) at Tc = 25 C — 71 W
Packhaging / Kaso — TO-252AA (DPAK)
Hanay ng Temperature na Operasyon — -55 C to +175 C
Gate-Source Voltage (VGS) max — +/- 20 V
Number of Units in IC — 1
Lead-Free / RoHS — Yes (PBF suffix, lead-free)
Avalanche Rated — Yes (HEXFET family)

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