IRFR4615TRLPBF vs IRF7815TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR4615TRLPBF sa pamamagitan ng Infineon at IRF7815TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR4615TRLPBF | IRF7815TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | — |
| Total Gate Charge (Qg) | 26 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55C to +150C (Tj) |
| Packhaging | TO-252AA (DPAK) | SO-8 (8-SO) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | — |
| Energia ng Isang Pagpupuslit ng Pagbubwis | 109 mJ | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) at Ta=25C | — | 5.1 A |
| Rds(on) Max at Vgs=10V | — | 43 mOhm |
| Gate Threshold Voltage (Vgs(th)) Typ | — | 3.0 V |
| Total Gate Charge (Qg) Typ | — | 25 nC |
| Maximum Power Dissipation (Ta=25C) | — | 2.5 W |
| Level ng MSL | — | 1 |
| Tindminan RoHS | — | Compliant (Pb-free) |
| Lead-Free | — | Yes |
| Configuration | — | Single |
| Avalanche Rated | — | Yes |