IRFR4615TRLPBF vs IRF7815TRPBF 比較
詳細並排比較 IRFR4615TRLPBF 由 Infineon 與 IRF7815TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR4615TRLPBF | IRF7815TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | — |
| Total Gate Charge (Qg) | 26 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| 工作溫度範圍 | -55C to +175C | -55C to +150C (Tj) |
| 封裝 | TO-252AA (DPAK) | SO-8 (8-SO) |
| 安裝類型 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | — |
| 單脈衝突崩能量 | 109 mJ | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) at Ta=25C | — | 5.1 A |
| Rds(on) Max at Vgs=10V | — | 43 mOhm |
| Gate Threshold Voltage (Vgs(th)) Typ | — | 3.0 V |
| Total Gate Charge (Qg) Typ | — | 25 nC |
| Maximum Power Dissipation (Ta=25C) | — | 2.5 W |
| MSL 等級 | — | 1 |
| RoHS 狀態 | — | Compliant (Pb-free) |
| Lead-Free | — | Yes |
| Configuration | — | Single |
| Avalanche Rated | — | Yes |