IRFR540ZTRPBF vs IRFR3710ZTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR540ZTRPBF sa pamamagitan ng Infineon at IRFR3710ZTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR540ZTRPBF IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon

IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon

IRFR540ZTRPBF ✓ Nakahanda
Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR540ZTRPBF IRFR3710ZTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) 35 A (at Tc) —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) Max 28.5 mOhm at Vgs=10V —
Gate-Source Threshold Vgs(th) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) 39 nC —
Power Dissipation (Pd) 91 W (at Tc) —
Hanay ng Temperature na Operasyon -55 C to +175 C (junction) —
Packhaging TO-252AA (DPAK) surface mount TO-252AA (DPAK)
Technology IR MOSFET HEXFET (IR MOSFET)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain, Source) —
Level ng MSL 1 (unlimited floor life at <30 C / 85% RH) —
Tindminan RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
Automotive Qualified Yes (AEC-Q101) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 56 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Static Drain-Source On-Resistance RDS(on) max at VGS=10V — 18 mOhm
Power Dissipation (PD) at TC=25C — 140 W
Temperature ng Junction na Operasyon — -55C to +175C
Lead-Free — Yes

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