IRFR5505TRLPBF vs IRFR5505TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5505TRLPBF sa pamamagitan ng Infineon at IRFR5505TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR5505TRLPBF IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon

IRFR5505TRLPBF - P-Ch 55V 18A 110mOhm DPAK MOSFET | Infineon

IRFR5505TRLPBF ✓ Nakahanda
Infineon
IRFR5505TRPBF IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR5505TRLPBF IRFR5505TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement —
VDS (Drain-Source Voltage) -55 V —
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) -18 A (Tc) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] -72 A
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V) —
Total Gate Charge (Qg) 21.3 nC 21.3 nC
Power Dissipation (PD) 57 W (Tc = 25 °C) —
Hanay ng Temperature na Operasyon -55 °C to +175 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC] —
Technology IR MOSFET™ (HEXFET® generation 5) IR MOSFET (HEXFET 5th generation)
Packhaging TO-252AA (DPAK), surface mount TO-252AA (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) —
Level ng MSL 1 —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Series — HEXFET
Drain-Source Voltage (VDS) max — -55 V
Continuous Drain Current (ID) at TC=25C — -18 A
Gate-Source Voltage (VGS) max — +/-20 V
On-Resistance RDS(on) max at VGS=-10V — 110 mOhm
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Rise Time (tr) — [DATA_NEEDED: tr]
Fall Time (tf) — [DATA_NEEDED: tf]
Maximum Power Dissipation (PD) at TC=25C — 57 W
Temperature ng Junction na Operasyon — -55 C to +175 C
Thermal Resistance Junction-to-Case (RthJC) — 2.2 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 50 C/W (typical, DPAK on 1 oz copper)
Tindminan RoHS — Compliant (PBF suffix)
Lead-Free — Yes (PBF suffix)

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