IRLH5030TRPBF vs BSZ031NE2LS5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLH5030TRPBF sa pamamagitan ng Infineon at BSZ031NE2LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRLH5030TRPBF | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRLH5030TRPBF | BSZ031NE2LS5ATMA1 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25C | 13 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | — |
| Total Gate Charge (Qg) | 44 nC | — |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Power Dissipation at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 156 W | — |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W | — |
| Packhaging | PQFN-8 (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Profile Height | ≤ 0.9 mm | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Qualification | JEDEC standard | — |
| Rg Tested | 100% | — |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) | — |
| Industry-Standard Pinout | Yes | — |
| Technology / Platform | — | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | — | 25 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta=25C | — | 19 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | — | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 30 W |
| Temperature ng Junction na Operasyon | — | -55 C to +150 C |
| Level ng MSL | — | [DATA_NEEDED: MSL] |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |