IRLH5030TRPBF vs BSZ031NE2LS5ATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRLH5030TRPBF tarafından Infineon ve BSZ031NE2LS5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRLH5030TRPBF BSZ031NE2LS5ATMA1
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRLH5030TRPBF BSZ031NE2LS5ATMA1
FET Type N-Channel —
Technology IR MOSFET (HEXFET) —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TA=25C 13 A —
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 9 mOhm —
Total Gate Charge (Qg) 44 nC —
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Power Dissipation at TA=25C 3.6 W —
Power Dissipation at TC=25C 156 W —
Thermal Resistance to PCB (RthJC) 0.8 C/W —
Paket PQFN-8 (SuperSO8 5x6 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Profile Height ≤ 0.9 mm —
Montaj Türü Surface Mount Surface Mount
Qualification JEDEC standard —
Rg Tested 100% —
RoHS Compliance Compliant (Lead-free, Bromide-free, Halogen-free) —
Industry-Standard Pinout Yes —
Technology / Platform — OptiMOS 5 25V/30V N-channel trench MOSFET
Drain-Source Voltage (VDS) max — 25 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Continuous Drain Current (ID) at Ta=25C — 19 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
RDS(on) max @ VGS=10 V — 3.1 mOhm
RDS(on) typical @ VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 30 W
İşletim Jant Sıcaklığı — -55 C to +150 C
MSL Seviyesi — [DATA_NEEDED: MSL]
RoHS Durumu — Compliant
Lead-Free — Yes
Klorürsüz — Yes

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