IRLH5030TRPBF vs IRFH8201TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLH5030TRPBF sa pamamagitan ng Infineon at IRFH8201TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRLH5030TRPBF IRFH8201TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLH5030TRPBF —
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) StrongIRFET (trench MOSFET)
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TA=25C 13 A 49 A
Continuous Drain Current (ID) at TC=25C 100 A 100 A
On-Resistance RDS(on) max at VGS=10V 9 mOhm —
Total Gate Charge (Qg) 44 nC 56 nC at VGS=10V
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Power Dissipation at TA=25C 3.6 W —
Power Dissipation at TC=25C 156 W —
Thermal Resistance to PCB (RthJC) 0.8 C/W —
Packhaging PQFN-8 (SuperSO8 5x6 mm) SuperSO8 5x6 (PQFN-8) with exposed pad
Profile Height ≤ 0.9 mm —
Uri ng Pagpapasok Surface Mount Surface Mount
Qualification JEDEC standard —
Rg Tested 100% —
RoHS Compliance Compliant (Lead-free, Bromide-free, Halogen-free) —
Industry-Standard Pinout Yes —
Drain-Source Voltage (VDS) — 25 V
Pulsed Drain Current (IDM) — 324 A
RDS(on) max at VGS=10V — 0.95 mOhm
Gate Threshold Voltage (VGS(th)) — 1.35 V max
Output Capacitance (Coss) — 7.33 nF
Reverse Transfer Capacitance (Crss) — 850 pF
Power Dissipation (TA) — 3.6 W
Power Dissipation (TC) — 156 W
Hanay ng Temperature na Operasyon — -55C to +150C
Level ng MSL — [DATA_NEEDED: MSL level]
Tindminan RoHS — Compliant

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