IRLZ34NPBF vs IRFZ44NSTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLZ34NPBF sa pamamagitan ng Infineon at IRFZ44NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRFZ44NSTRLPBF - 55V 49A N-Channel HEXFET MOSFET D2PAK | Infineon
IRFZ44NSTRLPBF ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRLZ34NPBF | IRFZ44NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | — |
| Uri ng Transistor | N-Channel HEXFET Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | — |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | — |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | — |
| Total Gate Charge (Qg) | 16.7 nC (typical) | 42 nC |
| Power Dissipation (PD) at Tc=25 C | 68 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | TO-220AB (through-hole, 3 leads + tab) | D2PAK (TO-263) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Tindminan RoHS | Compliant (Pb-free PBF suffix) | Compliant |
| Level ng MSL | Not applicable (through-hole) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 49 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Drain-Source On-Resistance RDS(on) max | — | 17.5 mOhm at VGS=10V |
| Power Dissipation (TC) | — | 94 W |
| Power Dissipation (TA) | — | 3.8 W |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |
| Technology | — | HEXFET |
| Lead-Free (PBF suffix) | — | Yes |