ISC046N13NM6ATMA1 vs ISC0703NLSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC046N13NM6ATMA1 sa pamamagitan ng Infineon at ISC0703NLSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | ISC046N13NM6ATMA1 | ISC0703NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | 60 V |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| Packhaging / Kaso | PG-TDSON-8 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | -55C to +150C (junction) |
| Technology | OptiMOS 6 trench MOSFET | Trench MOSFET (OptiMOS family) |
| Gate Drive (recommended) | 10 V (typical) | — |
| Tindminan RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 13 A |
| Continuous Drain Current (ID) at Tc=25C | — | 57 A |
| Power Dissipation (PD) at Ta=25C | — | 3 W |
| Power Dissipation (PD) at Tc=25C | — | 44 W |
| Packhaging | — | PG-TDSON-8 (5x6 mm) |
| Standard Package Quantity | — | 5,000 (reel) |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: EAS rating] |