ISC0802NLSATMA1 vs ISC046N13NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC0802NLSATMA1 sa pamamagitan ng Infineon at ISC046N13NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | ISC0802NLSATMA1 | ISC046N13NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Part Number | ISC0802NLSATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Power MOSFET) | OptiMOS 6 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 135 V |
| Continuous Drain Current (ID) at Tc | 150 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| RDS(on) max at VGS=10V | 3.6 mOhm | — |
| Power Dissipation (Pd) at Ta | 2.5 W | — |
| Power Dissipation (Pd) at Tc | 125 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | -55 C to +175 C |
| Packhaging | PG-TDSON-8-7 (SuperSO8 5x6 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Part Family | — | OptiMOS 6 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 17 A |
| Continuous Drain Current (ID) at TC | — | 142 A |
| Power Dissipation (PD) at TA | — | 3 W |
| Power Dissipation (PD) at TC | — | 211 W |
| Packhaging / Kaso | — | PG-TDSON-8 |
| Gate Drive (recommended) | — | 10 V (typical) |
| Packaging | — | Tape & Reel |