ISC151N08NM6ATMA1 vs IQD005N04NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC151N08NM6ATMA1 sa pamamagitan ng Infineon at IQD005N04NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQD005N04NM6ATMA1 - 40V 0.5mΩ N-Ch MOSFET PG-TSON-8-9 | Infineon
IQD005N04NM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC151N08NM6ATMA1 | IQD005N04NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Patuloy na Drain Current (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS 6 trench MOSFET |
| Packhaging | PG-TDSON-8 FL | PG-TSON-8-9 (PQFN 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 8 | — |
| Channel Mode | Enhancement | — |
| Temperature na Operasyon | -55 °C to +175 °C | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 58 A |
| Pulsed Drain Current (IDM) at Tc | — | 610 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 0.5 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Level ng MSL | — | 1 |