ISC151N08NM6ATMA1 vs IQD005N04NM6ATMA1 比較
詳細並排比較 ISC151N08NM6ATMA1 由 Infineon 與 IQD005N04NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC151N08NM6ATMA1 | IQD005N04NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| 連續汲極電流 (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS 6 trench MOSFET |
| 封裝 | PG-TDSON-8 FL | PG-TSON-8-9 (PQFN 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| Channel Mode | Enhancement | — |
| 工作溫度 | -55 °C to +175 °C | — |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 58 A |
| Pulsed Drain Current (IDM) at Tc | — | 610 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 0.5 mOhm |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| 工作溫度範圍 | — | -55C to +150C |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| MSL 等級 | — | 1 |