ISZ019N03L5SATMA1 vs BSC014N04LSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISZ019N03L5SATMA1 sa pamamagitan ng Infineon at BSC014N04LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC014N04LSATMA1 BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon

BSC014N04LSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISZ019N03L5SATMA1 BSC014N04LSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 (<= 40V) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at TA=25C 22 A —
Continuous Drain Current (ID) at TC=25C 40 A —
RDS(on) at VGS=10V 1.9 mΩ (typical, ID=20A) —
Gate Threshold Voltage (VGS(th)) 2 V (typical) —
Gate-Source Voltage Rating (VGS) ±20 V —
Total Gate Charge (Qg) 44 nC at VGS=10V —
Input Capacitance (Ciss) 2800 pF at VDS=15V —
Packhaging PG-TSDSON-8-FL (5x6 mm) SuperSO8 (TDSON-8 FL) 5x6 mm
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C (TJ max) -55C to +175C
Level ng MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
RoHS / REACH Compliant —
Avalanche Rated Yes —
RG-tested 100% —
Series — OptiMOS 5
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 32 A
Continuous Drain Current (ID) at Tc — 100 A
RDS(on) max at VGS=10 V — 1.4 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 96 W
Gate-Source Voltage (VGS) max — 20 V
Technology — Trench (OptiMOS 5, thin-wafer)
Tindminan RoHS — Compliant

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