ISZ173N15NM6ATMA1 vs ISC151N08NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISZ173N15NM6ATMA1 sa pamamagitan ng Infineon at ISC151N08NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | ISZ173N15NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 150V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 80 V |
| Continuous Drain Current (ID) at Ta | 7.9 A | — |
| Continuous Drain Current (ID) at Tc | 48 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 94 W | — |
| Technology | OptiMOS 6 trench-gate MOSFET | OptiMOS 6 |
| Packhaging | PG-TSDSON-8 FL | PG-TDSON-8 FL |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Operating Mode | Enhancement Mode | — |
| Application | Hard and soft switching, high/low frequency | — |
| Lead-Free | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Tape & Reel Quantity | 5000 | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Patuloy na Drain Current (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Bilang ng Pins | — | 8 |
| Channel Mode | — | Enhancement |
| Temperature na Operasyon | — | -55 °C to +175 °C |