K3K8K80BM-MGCP vs K3LKBKB0BM-MGCP Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K3K8K80BM-MGCP sa pamamagitan ng Samsung Electronics at K3LKBKB0BM-MGCP sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K3LKCKC0BM-MGCP - 64Gb LPDDR5 DRAM 6400Mbps | Samsung
K3K8K80BM-MGCP ✓ NakahandaSamsung Electronics
K3LKBKB0BM-MGCP - 32Gbit LPDDR5 DRAM 6400Mbps | Samsung
K3LKBKB0BM-MGCP ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K3K8K80BM-MGCP | K3LKBKB0BM-MGCP |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $46.62 |
| Uri ng Memory | LPDDR5 SDRAM (DRAM) | DRAM (LPDDR5 SDRAM) |
| Density | 64 Gb | — |
| Organisasyon | 2G x 32 | 1G x 32 |
| Rate ng Data | 6400 Mbps | 6400 Mbps per pin |
| Interface | LPDDR5 (CMOS) | LPDDR5 x32 |
| Packhaging | FBGA-315 (PBGA315) | FBGA-315 |
| Supply Voltages | 500 mV, 900 mV, 1.05 V, 1.8 V | — |
| Temperature na Operasyon | -25C to +85C | -25C to +85C |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Memory Category | Volatile DRAM | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead Free | Yes | — |
| Application Class | Specialized ICs / Memory | — |
| I/O Width | 32-bit | — |
| Laki ng Memory | — | 32 Gbit |
| Supply Voltage Rails | — | 500 mV, 900 mV, 1.05 V, 1.8 V |
| Technology Generation | — | LPDDR5 (JEDEC LPDDR5 family) |
| Density per Package | — | 4 GB (32 Gbit) |
| Refresh | — | Self-refresh and auto-refresh (LPDDR5 standard) |
| Application Segment | — | Mobile, embedded, industrial computing |
| Standby / Deep Sleep | — | LPDDR5 deep-sleep power states |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Access Time / Latency | — | [DATA_NEEDED: CAS latency] |