K4A4G085WD-BCRC vs K4A4G045WD-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WD-BCRC sa pamamagitan ng Samsung Electronics at K4A4G045WD-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G085WD-BCRC - 4Gb DDR4-2400 SDRAM 512Mx8 | Samsung
K4A4G085WD-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G085WD-BCRC | K4A4G045WD-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Memory Density | 4 Gbit | — |
| Organisasyon | 512M x 8 | 1G x 4 |
| Uri ng Memory | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| Rate ng Data | 2400 Mb/s (PC2400) | — |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Packhaging | FBGA-78 (TFBGA) | 78-ball TFBGA (FBGA) |
| Number of Terminals | 78 | 78 |
| Interface | Parallel | DDR4 parallel, double data rate |
| Access Mode | Multi-bank page burst | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | — |
| Level ng MSL | [DATA_NEEDED: MSL Level] | — |
| Density | — | 4 Gb |
| Speed Class | — | DDR4-2133 (PC2133) |
| Die Generation | — | D-die |
| Terminal Form | — | Ball (BGA) |
| Package Shape | — | Rectangular |
| Burst Length | — | 8 (per Samsung DDR4 SDRAM datasheet Rev. 1.1) |
| Speed Bin Notation | — | CL-tRCD-tRP order (per Samsung ordering information) |
| Datasheet Pages | — | 66 pages (K4A4G045WD / K4A4G085WD family) |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | — | [DATA_NEEDED: refresh interval 1x/2x/4x support] |