K4A4G165WD-BCRC vs K4A4G165WE-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WD-BCRC sa pamamagitan ng Samsung Electronics at K4A4G165WE-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G165WE-BCTD - 4Gb DDR4 SDRAM 256Mx16 1.2V | Samsung
K4A4G165WE-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G165WD-BCRC | K4A4G165WE-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 4 Gbit | — |
| Organisasyon | 256M x 16 | — |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | FBGA-96 | FBGA-96 (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Generation | Samsung D-die | — |
| Uri ng Interface | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Tindminan RoHS | Lead free / RoHS Compliant | Compliant (per JLCPCB listing) |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Laki ng Memory | — | 4 Gbit |
| Memory Organization | — | 256M x 16 |
| Interface | — | Parallel, x16 |
| Supply Voltage (VDD) | — | 1.2 V (1.14 V to 1.26 V) |
| Die Generation | — | E-die |
| Terminal Count | — | 96 |
| Speed Grade | — | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] |
| Product Status | — | Active |
| Datasheet Revision | — | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Burst Length | — | BL8 (JEDEC DDR4) |
| Bank Group Architecture | — | Yes (DDR4) |