K4A4G165WD-BCTD vs K4A4G165WD-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WD-BCTD sa pamamagitan ng Samsung Electronics at K4A4G165WD-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G165WD-BCTD | K4A4G165WD-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasyon | 256M x 16 | 256M x 16 |
| Rate ng Data | 2666 Mbps/pin (-BCTD speed grade) | 2133 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| Core Supply (VPP) | 2.5 V | — |
| Interface | SSTL-12 | DDR4 (synchronous, source-synchronous strobe) |
| Data Mask | Yes (DM per byte lane) | — |
| Bank Architecture | 16 banks / 4 bank groups | 4 bank groups x 4 banks |
| Packhaging | 96-ball FBGA | FBGA-96 |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Temperature na Operasyon | 0C to +85C (commercial) | [DATA_NEEDED: operating temperature range] |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes (external RZQ resistor) | — |
| CRC / CA Parity | CRC read/write support | — |
| Reset | Asynchronous reset (RESET_n) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (lead-free suffix) |
| Core Voltage | — | 1.2 V |
| Die Generation | — | D-die |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency at 2133 speed bin] |
| Burst Length | — | 8 (BL8, fixed/chop) |
| Pb-Free | — | Yes (per Samsung part-numbering suffix) |
| Refresh | — | Self-refresh supported (TCSR per DDR4 standard features) |