K4A8G165WB-BCTD vs AS4C512M16D4B-62BCNTR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCTD sa pamamagitan ng Samsung Electronics at AS4C512M16D4B-62BCNTR sa pamamagitan ng Alliance Memory. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ NakahandaAlliance Memory
AS4C512M16D4B-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4B-62BCNTR ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCTD | AS4C512M16D4B-62BCNTR |
|---|---|---|
| Brand | Samsung Electronics | Alliance Memory |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasyon | 512M x 16 | 512M x 16 |
| Rate ng Data | 2666 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| Temperature na Operasyon | 0C to +85C | 0°C to 95°C |
| Packhaging | 96FBGA | 96-FBGA (7.5x13 mm) |
| Die Generation | B-die | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Interface | DDR4 (parallel, double data rate) | Parallel |
| Data Mask | Supported (DM per x16 lane) | — |
| ZQ Calibration | Supported | — |
| Dynamic On-Die Termination | Supported | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | 19 ns |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Tindminan RoHS | Compliant (per JLCPCB listing: ROHS) | Compliant |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL Level] | — |
| Laki ng Memory | — | 8 Gbit (512M x 16) |
| Clock Frequency | — | 1600 MHz |
| Volte ng Pagbibigay | — | 1.2 V (1.14V to 1.26V) |
| JEDEC Standard | — | Compliant |
| Revision | — | Rev.B |
| Lead-Free | — | Yes |