K4AAG085WA-BCWE vs K4AAG085WM-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG085WA-BCWE sa pamamagitan ng Samsung Electronics at K4AAG085WM-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG085WA-BCWE - 16Gb DDR4-3200 SDRAM 1.2V | Samsung
K4AAG085WA-BCWE ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG085WA-BCWE | K4AAG085WM-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | [DATA_NEEDED: exact density in Gb] |
| Organisasyon | 2G x 8 | x8 |
| Rate ng Data | 3200 Mbps (DDR4-3200) | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Temperature na Operasyon | 0 C to 85 C | [DATA_NEEDED: operating temperature range] |
| Packhaging | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | JEDEC DDR4 | SSTL12 |
| Memory Width | 8-bit | — |
| Refresh | Auto-refresh (per JEDEC DDR4) | — |
| Application Class | Main memory / embedded DRAM | — |
| Tindminan RoHS | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Manufacturer | Samsung Electronics | — |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Max Data Rate | — | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) |
| Architecture | — | Bank-group DDR4 |
| Termination | — | On-Die Termination (ODT) |
| Latensya ng CAS | — | [DATA_NEEDED: CL of -BCRC speed grade] |
| Clock | — | Differential clock CK/CK# |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |