K4AAG165WA-BCPB vs K4A8G165WC-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG165WA-BCPB sa pamamagitan ng Samsung Electronics at K4A8G165WC-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4AAG165WA-BCPB ✓ NakahandaSamsung Electronics
K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG165WA-BCPB | K4A8G165WC-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | Volatile DRAM (DDR4 SDRAM) | DDR4 SDRAM (volatile DRAM) |
| Technology | DDR4 | — |
| Density | 16 Gb | — |
| Organisasyon | 1G x 16 | — |
| Rate ng Data | 3200 Mbps | DDR4-2133 (2133 Mbps/pin) |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface Voltage (VDDQ) | 1.2 V | — |
| Packhaging | FBGA-96 | 96-ball FBGA (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature for BCPB grade] | 0C to +95C |
| Memory Format | DRAM | — |
| Packaging | Tray | — |
| Product Status | Active | — |
| Power Consumption | 25% lower than DDR3 (per Samsung DDR4 family) | — |
| Bank Group Architecture | Yes (DDR4 internal bank groups) | — |
| On-Die Termination (ODT) | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Max Capacity Family | Up to 32GB component (Samsung DDR4 family) | — |
| Laki ng Memory | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Volte ng Pagbibigay | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Interface | — | DDR4 (16-bit data bus) |
| Die Generation | — | C-die (1Y nm class) |
| Mga Karakteristika | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Termination | — | On-die termination (ODT), dynamic |
| Level ng MSL | — | [DATA_NEEDED: MSL Level] |
| Standard | — | JEDEC DDR4 SDRAM |