K4B4G1646 vs K4B4G1646E-BYK000 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646 sa pamamagitan ng Samsung Electronics at K4B4G1646E-BYK000 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646 | K4B4G1646E-BYK000 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3 SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gbit | 4 Gbit |
| Organisasyon | 256M x 16 | 256M x 16 |
| Interface | Parallel | Parallel |
| Max Data Rate | Up to 2133 Mbps (grade dependent) | — |
| Clock Frequency Range | 800 MHz to 2133 Mbps (grade dependent) | — |
| Volte ng Pagbibigay | 1.5 V (DDR3L variants 1.35 V) | — |
| Packhaging | 96-FBGA | 96-FBGA (BYK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| On-Chip Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Die Revisions | B-die, D-die, Q-die (DDR3L) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Speed Grade | — | DDR3-1600 (1.25 ns clock cycle) |
| Clock Frequency | — | 800 MHz |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] |
| Supply Voltage (VDD) | — | 1.35 V (DDR3L), 1.5 V compatible (DDR3) |
| Number of Banks | — | [DATA_NEEDED: bank count] |
| Die Process | — | Samsung E-die |
| Mga Karakteristika | — | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask |
| Access Time | — | 1.25 ns |