K4B4G1646D-BMK0 vs NT5CB256M16CP-DI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BMK0 sa pamamagitan ng Samsung Electronics at NT5CB256M16CP-DI sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4B4G1646D-BMK0 | NT5CB256M16CP-DI |
|---|---|---|
| Brand | Samsung Electronics | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Density | 4 Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps (PC3L-12800) | — |
| Voltage | 1.35 V | — |
| Temperature na Operasyon | -40°C to 95°C | — |
| Packhaging | 96FBGA (TFBGA) | TFBGA-96 |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Die Version | D-die | — |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | — |
| RoHS Compliant | Yes | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Number of Functions | 1 | — |
| Rate ng Data | 1600 Mbps | 1600 Mbps/pin (max) |
| Volte ng Pagbibigay | — | 1.35 V (DDR3L) |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 5, 6, 7, 8, 9, 10, 11 |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Additive Latency | — | 0-13 |
| Hanay ng Temperature na Operasyon | — | -40°C to +95°C (industrial), -40°C to +105°C (automotive) |
| RoHS | — | Compliant |
| Differential Clock Input | — | Yes (CK, CK#) |
| On-Die Termination (ODT) | — | Yes |