K4B4G1646E-BMMA vs K4B4G1646D-BYK00 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646E-BMMA sa pamamagitan ng Samsung Electronics at K4B4G1646D-BYK00 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646E-BMMA | K4B4G1646D-BYK00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $16.08 | — |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Rate ng Data | 1600 Mbps | 1600 Mbps |
| Volte ng Pagbibigay | 1.35 V | 1.35 V (also operates at 1.5 V) |
| Temperature na Operasyon | -40°C to +95°C | 0°C to 85°C |
| Packhaging | 96-FBGA (9x13 mm) | 96-ball TFBGA |
| Number of Banks | 8 | — |
| Interface | Parallel | — |
| Clock Frequency | 800 MHz | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | Programmable |
| Burst Length | 8, 4 (with burst chop) | — |
| On-Die Termination | Yes (Dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Number of Terminals | — | 96 |
| Additional Features | — | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination |
| Wala sa Halogen | — | Yes |
| Package Shape | — | RECTANGULAR |
| Temperature Grade | — | OTHER |