K4B4G1646E-BYK000 vs MT41K64M16TW-107 AUT:J Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646E-BYK000 sa pamamagitan ng Samsung Electronics at MT41K64M16TW-107 AUT:J sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ NakahandaMicron Technology
MT41K64M16TW-107 AUT:J - 1Gbit DDR3L SDRAM 933MHz | Micron
MT41K64M16TW-107 AUT:J ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646E-BYK000 | MT41K64M16TW-107 AUT:J |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | SDRAM - DDR3L |
| Laki ng Memory | 4 Gbit | 1 Gbit |
| Organisasyon | 256M x 16 | 64M x 16 |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | — |
| Clock Frequency | 800 MHz | 933 MHz |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | — |
| Number of Banks | [DATA_NEEDED: bank count] | — |
| Die Process | Samsung E-die | — |
| Packhaging | 96-FBGA (BYK) | 96-FBGA (8 x 14 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | Parallel | Parallel |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Mga Karakteristika | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Access Time | 1.25 ns | 20 ns |
| Volte ng Pagbibigay | — | 1.35 V (DDR3L), 1.5 V compatible |
| Temperature Grade | — | AUT (automotive) |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency] |
| Refresh Rate | — | [DATA_NEEDED: refresh rate] |
| Rate ng Data | — | 1866 MT/s (DDR3L-1866) |
| Termination | — | On-Die Termination (ODT) |
| Packaging | — | Tray (T/R per listing) |