K4RBH165VB-BCWM vs K4RAH165VB-BCQK Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4RBH165VB-BCWM sa pamamagitan ng Samsung Electronics at K4RAH165VB-BCQK sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4RBH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung
K4RBH165VB-BCWM ✓ NakahandaSamsung Electronics
K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung
K4RAH165VB-BCQK ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4RBH165VB-BCWM | K4RAH165VB-BCQK |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | — |
| Organisasyon | 1G x 16 | — |
| Supply Voltage (VDD) | 1.1 V | 1.1 V |
| Data Rate Class | DDR5 5600 Mbps (family per Octopart listing of sibling part) | — |
| Packhaging | FBGA-106 | 106-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +85C | 0C to +85C |
| On-Die ECC | Yes | — |
| Write CRC | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Asynchronous Reset | Yes | — |
| Operating Mode | DLL Enabled | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead Free | Yes | — |
| Level ng MSL | [DATA_NEEDED: MSL Level] | — |
| Refresh Rate | [DATA_NEEDED: Refresh Rate] | — |
| Laki ng Memory | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Rate ng Data | — | 4800 Mbps |
| Error Correction | — | On-die ECC |
| Mga Karakteristika | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Memory Format | — | DRAM (volatile) |
| Packaging | — | Tray |
| Katayuan ng Lifecycle | — | Active |
| Unit Price | — | [DATA_NEEDED: unit price] |