K6F3216U6M-EF70T vs K6F2016U4E-EF70T Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K6F3216U6M-EF70T sa pamamagitan ng Samsung Electronics at K6F2016U4E-EF70T sa pamamagitan ng Samsung Electro-Mechanics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K6F3216U6M-EF70T - 32Mbit Async SRAM 2Mx16 | Samsung
K6F3216U6M-EF70T ✓ NakahandaSamsung Electro-Mechanics
K6F2016U4E-EF70T - 2Mbit Async SRAM 70ns 48-TFBGA | Samsung
K6F2016U4E-EF70T ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K6F3216U6M-EF70T | K6F2016U4E-EF70T |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electro-Mechanics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | SRAM - Asynchronous | SRAM - Asynchronous |
| Laki ng Memory | 32 Mbit | 2 Mbit |
| Organisasyon | 2M x 16 | 128K x 16 |
| Volte ng Pagbibigay | 3 V | — |
| Access Time | 55 ns | — |
| Interface | Parallel | Parallel |
| Technology | Full CMOS Static RAM | Full CMOS |
| Packhaging | 55-TFBGA (7.5 x 12 mm) | 48-TFBGA (6 x 7) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Speed Grade | -EF70 (55 ns) | — |
| Standard Pack Qty | 2400 | — |
| Tindminan RoHS | NO (per third-party listing) | [DATA_NEEDED: RoHS status] |
| Memory Composition | Volatile SRAM | — |
| Refresh Requirement | None (static memory) | None (static RAM) |
| Access Time (tAA) | — | 70 ns |
| Supply Voltage (VCC) | — | 2.7 V to 3.3 V |
| Active Supply Current (ICC1) | — | [DATA_NEEDED: ICC1] |
| Standby Current (ICC2) | — | [DATA_NEEDED: ICC2 for 70 ns grade] |
| Control Signals | — | CE, OE, WE |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | — | [DATA_NEEDED: MSL level] |