K6X0808C1D-BF70T vs K6X0808C1D-GF70000 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K6X0808C1D-BF70T sa pamamagitan ng Samsung Electronics at K6X0808C1D-GF70000 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung
K6X0808C1D-BF70T ✓ NakahandaSamsung Electronics
K6X0808C1D-GF70000 - 256Kbit 5V SRAM 70ns | Samsung | 28-SOP
K6X0808C1D-GF70000 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K6X0808C1D-BF70T | K6X0808C1D-GF70000 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | SRAM - Asynchronous | SRAM - Asynchronous |
| Laki ng Memory | 256 Kbit | 256 Kbit |
| Memory Organization | 32K x 8 | — |
| Memory Interface | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Write Cycle Time - Word, Page | 70 ns | — |
| Voltage - Supply | 4.5 V to 5.5 V | — |
| Temperature na Operasyon | -40C to +85C (TA) | [DATA_NEEDED: operating temperature range] |
| Packhaging | 28-SOP | 28-SOP |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Technology | CMOS | — |
| Address Bus Width | 15 bit (A0-A14) | 15 bit (A0-A14) |
| Width ng Data Bus | 8 bit (I/O0-I/O7) | 8 bit (tri-state I/O) |
| Control Signals | CE, OE, WE | CE, OE, WE |
| I/O Compatibility | TTL compatible | — |
| Refresh Requirement | None (fully static operation) | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Organisasyon | — | 32K x 8 bit |
| Interface | — | Parallel |
| Supply Voltage - Min | — | 4.5 V |
| Supply Voltage - Max | — | 5.5 V |
| Technology | — | Low Power CMOS |
| Input/Output Levels | — | TTL compatible |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |