K9ADGD8S0A vs K9DVGY8J5M Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K9ADGD8S0A sa pamamagitan ng Samsung Electronics at K9DVGY8J5M sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung
K9ADGD8S0A ✗ Tapus ng BuhaySamsung Electronics
K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung
K9DVGY8J5M ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K9ADGD8S0A | K9DVGY8J5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | EEPROM | Memory ICs |
| Katayuan ng Lifecycle | Tapus ng Buhay | Aktibo |
| Device Type | 3D V-NAND flash memory bare die | — |
| Process Technology | Terabit Cell Array Transistor (TCAT) | — |
| Architecture | 3D vertical NAND (V-NAND) | — |
| Form Factor | Bare die (unpackaged) | — |
| Found In | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages | — |
| Known Application | Samsung 850 Pro 128 GB SSD | — |
| Memory Class | Non-volatile NAND flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Documented By | TechInsights report SAR-1407-802 | — |
| Capacity | [DATA_NEEDED: die capacity] | — |
| Volte ng Pagbibigay | [DATA_NEEDED: supply voltage] | — |
| Interface | [DATA_NEEDED: interface type] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature] | [DATA_NEEDED: operating temperature range] |
| Packhaging | [DATA_NEEDED: package] | — |
| Product Type | — | Raw NAND Flash Memory |
| NAND Technology | — | Samsung V-NAND (3D TLC) |
| Flash ID | — | EC519A3F8CCB |
| Density | — | [DATA_NEEDED: die density (Gb)] |
| Organization (Page/Block) | — | [DATA_NEEDED: page and block organization] |
| Uri ng Interface | — | [DATA_NEEDED: interface (toggle DDR / async)] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| Program Page Time (tPROG) | — | [DATA_NEEDED: tPROG typical/us] |
| Block Erase Time (tBERS) | — | [DATA_NEEDED: tBERS typical/us] |
| Read Time (tR) | — | [DATA_NEEDED: tR typical/us] |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: package type and dimensions] |
| Uri ng Pagpapasok | — | Surface Mount |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |