M29W064FT70N3F vs M29W064FT70N3E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29W064FT70N3F sa pamamagitan ng Micron Technology at M29W064FT70N3E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29W064FT70N3E - 64Mb 3V Parallel NOR Flash 70ns | Micron
M29W064FT70N3E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29W064FT70N3F | M29W064FT70N3E |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | NOR Flash | NOR Flash (Parallel) |
| Density | 64 Mbit | 64 Mbit |
| Organisasyon | 8 Mbit x8 / 4 Mbit x16 | 8 Mb x8 or 4 Mb x16 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | up to 3.6 V for program, erase, read | — |
| VPP Fast Program Voltage | 12 V (optional) | — |
| Interface | Parallel | Parallel, CFI compliant |
| Boot Block Configuration | Top boot block (FT) | — |
| Temperature na Operasyon | -40C to +125C | -40C to +85C |
| Packhaging | 48-TSOP I | 48-TSOP |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Programming Method | Command set / data polling / toggle bit | — |
| Block Protection | Yes, with temporary unprotection | — |
| Product Longevity Program | No | No |
| Width | x8/x16 | — |
| Tindminan RoHS | unknown | [DATA_NEEDED: RoHS compliance status] |
| Volte ng Pagbibigay | — | 2.7 V to 3.6 V |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Program/Erase Cycles | — | [DATA_NEEDED: program/erase endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |