MRF5S19100HR vs MRF5S19100HR5 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF5S19100HR sa pamamagitan ng NXP Semiconductors at MRF5S19100HR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF5S19100HR MRF5S19100HR - 100W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19100HR - 100W RF Power MOSFET 1930-1990 MHz | NXP

MRF5S19100HR ✓ Nakahanda
NXP Semiconductors
MRF5S19100HR5 MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP

MRF5S19100HR5 Obsolete

Pagsanggunian na paghahambing

Parametro MRF5S19100HR MRF5S19100HR5
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Obsolete
Manufacturer NXP Semiconductors —
Part Family MRF5S19090 / MRF5S19100 —
Device Type N-Channel Enhancement-Mode Lateral RF Power MOSFET —
Frequency Range 1930 - 1990 MHz —
Output Power (Avg) 22 W (2-carrier N-CDMA) —
Output Power (PEP) 100 W (typical, single tone) —
Power Gain 13.9 dB (typical at Pout = 22 W) —
Drain Efficiency >30% (typical, 2-carrier) —
Drain-Source Voltage (Max) 65 V —
Drain Operating Voltage 28 V nominal —
Quiescent Current (IDQ) 1000 mA —
Gate-Source Voltage (Max) [DATA_NEEDED: VGS maximum rating] —
Temperature ng Junction na Operasyon -40C to +200C —
Packhaging NI-780 (ceramic flange) —
Uri ng Pagpapasok Flange / bolt-down, surface-mount RF Chassis Mount / Flange
Polarity / Channel N-Channel, dual-die —
ESD Protection Gate-source ESD diodes integrated Yes (per datasheet)
Tindminan RoHS Compliant (per NXP product page) [DATA_NEEDED: rohs status]
Wala sa Halogen [DATA_NEEDED: halogen-free status] —
Storage Temperature -65C to +200C (per NXP RF Power standard) —
Uri ng Transistor — LDMOS (RF Power)
Technology — N-Channel MOSFET
Frequency Band — 1.93 GHz to 1.99 GHz
Output Power (Pout) — 22 W
Power Gain at Test — 13.9 dB
Drain-Source Voltage Rated (Vdss) — 65 V
Test Voltage (Vd) — 28 V
Test Current (Id) — 1 A
Packhaging / Kaso — NI-780 (3-pin ceramic flange)
Supplier Device Package — NI-780
Configuration — Single N-Channel
Part Status — Obsolete
Lead Finish — [DATA_NEEDED: lead finish]
Channel Temperature (Tj max) — [DATA_NEEDED: junction temp absolute maximum]

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