MRF5S19100HR vs MRF5S19100HR5 比較
詳細並排比較 MRF5S19100HR 由 NXP Semiconductors 與 MRF5S19100HR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF5S19100HR | MRF5S19100HR5 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | Obsolete |
| Manufacturer | NXP Semiconductors | — |
| Part Family | MRF5S19090 / MRF5S19100 | — |
| Device Type | N-Channel Enhancement-Mode Lateral RF Power MOSFET | — |
| Frequency Range | 1930 - 1990 MHz | — |
| Output Power (Avg) | 22 W (2-carrier N-CDMA) | — |
| Output Power (PEP) | 100 W (typical, single tone) | — |
| Power Gain | 13.9 dB (typical at Pout = 22 W) | — |
| Drain Efficiency | >30% (typical, 2-carrier) | — |
| Drain-Source Voltage (Max) | 65 V | — |
| Drain Operating Voltage | 28 V nominal | — |
| Quiescent Current (IDQ) | 1000 mA | — |
| Gate-Source Voltage (Max) | [DATA_NEEDED: VGS maximum rating] | — |
| 工作接面溫度 | -40C to +200C | — |
| 封裝 | NI-780 (ceramic flange) | — |
| 安裝類型 | Flange / bolt-down, surface-mount RF | Chassis Mount / Flange |
| Polarity / Channel | N-Channel, dual-die | — |
| ESD Protection | Gate-source ESD diodes integrated | Yes (per datasheet) |
| RoHS 狀態 | Compliant (per NXP product page) | [DATA_NEEDED: rohs status] |
| 無鹵素 | [DATA_NEEDED: halogen-free status] | — |
| Storage Temperature | -65C to +200C (per NXP RF Power standard) | — |
| 電晶體類型 | — | LDMOS (RF Power) |
| Technology | — | N-Channel MOSFET |
| Frequency Band | — | 1.93 GHz to 1.99 GHz |
| Output Power (Pout) | — | 22 W |
| Power Gain at Test | — | 13.9 dB |
| Drain-Source Voltage Rated (Vdss) | — | 65 V |
| Test Voltage (Vd) | — | 28 V |
| Test Current (Id) | — | 1 A |
| 封裝 / 外殼 | — | NI-780 (3-pin ceramic flange) |
| Supplier Device Package | — | NI-780 |
| Configuration | — | Single N-Channel |
| Part Status | — | Obsolete |
| Lead Finish | — | [DATA_NEEDED: lead finish] |
| Channel Temperature (Tj max) | — | [DATA_NEEDED: junction temp absolute maximum] |