MRF5S4140HR3 vs MRF5S9101NR1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF5S4140HR3 sa pamamagitan ng NXP Semiconductors at MRF5S9101NR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF5S4140HR3 MRF5S4140HR3 - 465MHz 28V 28W RF Power LDMOS | NXP

MRF5S4140HR3 - 465MHz 28V 28W RF Power LDMOS | NXP

MRF5S4140HR3 ✓ Nakahanda
NXP Semiconductors
MRF5S9101NR1 MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors

MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors

MRF5S9101NR1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF5S4140HR3 MRF5S9101NR1
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel Enhancement-Mode Lateral MOSFET (LDMOS) LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Frequency Band 400-500 MHz —
Test Frequency 465 MHz 960 MHz
Typical Output Power 28 W avg. —
Power Gain 21 dB at 465 MHz 17.5 dB (typ at 960 MHz, 26 V, 700 mA)
Operating Drain Voltage 28 V typical —
Drain-Source Voltage (Max) 65 V —
DC Bias Current (Id) 1.25 A typical —
Configuration Single, common-source —
Maximum Power Dissipation 427 W absolute (per partstack profile) —
Packhaging NI-780H-2L (ceramic flange mount) —
Style ng Pagpapasok Flange mount, surface-mount leads —
Input Matching Internal, broadband —
Operating Mode Class AB, large-signal —
Application Single N-CDMA base station PA, 450 MHz band GSM / GSM EDGE base station PAs, 869–960 MHz
Tindminan RoHS [DATA_NEEDED: explicit RoHS status not in web data] —
Lead-Free [DATA_NEEDED: lead-free status not in web data] —
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Part Number — MRF5S9101NR1
Frequency Range — 869 MHz to 960 MHz
Output Power (P1dB) — 100 W (typ)
Drain Supply Voltage (Vdd) — 26 V (nominal), 28 V (max operating)
Drain Breakdown Voltage (Vdss) — 68 V
Quiescent Current (Idq) — 700 mA
Drain Current (Test) — 700 mA
Hanay ng Temperature na Operasyon — [DATA_NEEDED: operating temperature range]
Junction Temperature (Max) — 200 °C
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
Packhaging / Kaso — TO-270 WB-4 (CASE 1486-03), STYLE 1, plastic overmold
Uri ng Pagpapasok — Surface / Flange Mount (through-board thermal pad)
Lead-Free / RoHS — Lead-free (N suffix indicates lead-free transition)
Thermal Resistance (junction-to-case) — [DATA_NEEDED: theta_JC]

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