MRF6S27015GNR1 vs MRF6S27015NR1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S27015GNR1 sa pamamagitan ng NXP Semiconductors at MRF6S27015NR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF6S27015GNR1 MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 ✓ Nakahanda
NXP Semiconductors
MRF6S27015NR1 MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP

MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP

MRF6S27015NR1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF6S27015GNR1 MRF6S27015NR1
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer NXP Semiconductors NXP Semiconductors (formerly Freescale)
Part Type RF Power MOSFET, N-Channel, Lateral —
Technology HV6 Lateral N-Channel Enhancement-Mode MOSFET —
Packhaging TO-270-2 (Case 1265-09, Style 1) Gull-Wing —
Operating Frequency Range 2300 MHz to 2700 MHz —
Drain-Source Voltage (VDSS) 68 V (max) —
Operating Drain Voltage (Vdd) 28 V (typical) —
Output Power (Avg, W-CDMA) 3 W 3 W
Power Gain (Typ, 2.6 GHz) 14 dB —
Test Quiescent Current (IDQ) 160 mA —
Drain Efficiency (Typ) [DATA_NEEDED: drain efficiency %] —
Channel Temperature (Tch) [DATA_NEEDED: max channel temp C] —
Thermal Resistance (Rth) [DATA_NEEDED: junction-to-case thermal resistance C/W] —
Configuration Single-ended, common-source —
Uri ng Pagpapasok Surface Mount (gull-wing leads) Surface Mount
Target Waveform Single-carrier W-CDMA, LTE, WiMAX —
Tindminan RoHS Compliant Compliant (RoHS-compliant PPI suffix where applicable)
Lead-Free Yes —
Level ng MSL [DATA_NEEDED: MSL rating] —
Part Number — MRF6S27015NR1
Device Type — RF Power MOSFET, N-Channel, Lateral, Enhancement-Mode
Frequency Range — 2300 to 2700 MHz
Typical Test Frequency — 2600 MHz
Drain-Source Voltage (Max, VDS) — 68 V
Operating Drain Voltage (VDD) — 28 V
Power Gain (Typical at 2.6 GHz) — 14 dB
Quiescent Drain Current (IDQ) — 160 mA
Drain Efficiency (Typical) — [DATA_NEEDED: % value at rated Pout]
Packhaging / Kaso — TO-270-2 (Case 1265-09, Style 1) over-molded plastic, gull-wing leads
VSWR Ruggedness — 10:1 at rated operating voltage
Lead-Free Finish — Yes (NiPdAu lead-frame and matte tin leads)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL per J-STD-020 rating]
Temperature ng Junction na Operasyon — -40 C to +150 C (per datasheet)

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