MRF6S27085HR3 vs MRF6S19100HR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S27085HR3 sa pamamagitan ng NXP Semiconductors at MRF6S19100HR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS
MRF6S27085HR3 ✓ NakahandaNXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF6S27085HR3 | MRF6S19100HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF6S27085HR3 | MRF6S19100HR3 |
| Uri ng Transistor | LDMOS, N-Channel, Enhancement-Mode, Lateral | — |
| Application | RF Power Amplifier | — |
| Operating Frequency | 2600 MHz to 2700 MHz | — |
| Test Frequency | 2.66 GHz | — |
| Output Power (Average, P1dB-rated) | 20 W | — |
| Power Gain (Typ) | 15.5 dB | — |
| Drain-Source Voltage Rating | 68 V | — |
| Operating Drain Voltage | 28 V | — |
| Quiescent Bias Current (Test) | 900 mA | — |
| Packhaging / Kaso | NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount | NI-780H-2L (Case 465-06, Style 1) |
| Bilang ng Pin | 3 (Drain, Gate, Source) | — |
| Uri ng Pagpapasok | Flange / Chassis mount with bolt-down thermal pad | Flanged / Screw-mount with ceramic body |
| Packaging | Tape & Reel (suffix HR3) | — |
| Technology | Lateral DMOS (LDMOS) | N-Channel LDMOS |
| Tindminan RoHS | Compliant per Freescale/NXP material declaration | Compliant (per NXP product page) |
| Device Type | — | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Operating Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | — | 22 W (N-CDMA Average) |
| Power Gain | — | 16.1 dB (typical at 1.99 GHz) |
| Drain Voltage (Vds) | — | 28 V |
| Quiescent Drain Current (Idq) | — | 900 mA (typical) |
| Lead Style | — | Dual blade (HR3 suffix) |
| Operating Mode | — | Class AB (linear) |
| Target Applications | — | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |