MRF6S27085HR3 vs MRF6S19100HR3 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRF6S27085HR3 tarafından NXP Semiconductors ve MRF6S19100HR3 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ Aktif
NXP Semiconductors
MRF6S19100HR3 MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP

MRF6S19100HR3 ✓ Aktif

Özellik Karşılaştırması

Parametre MRF6S27085HR3 MRF6S19100HR3
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale) NXP Semiconductors (formerly Freescale Semiconductor)
Part Number MRF6S27085HR3 MRF6S19100HR3
Transistor Türü LDMOS, N-Channel, Enhancement-Mode, Lateral —
Application RF Power Amplifier —
Operating Frequency 2600 MHz to 2700 MHz —
Test Frequency 2.66 GHz —
Output Power (Average, P1dB-rated) 20 W —
Power Gain (Typ) 15.5 dB —
Drain-Source Voltage Rating 68 V —
Operating Drain Voltage 28 V —
Quiescent Bias Current (Test) 900 mA —
Paket / Kas NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount NI-780H-2L (Case 465-06, Style 1)
Pin Sayısı 3 (Drain, Gate, Source) —
Montaj Türü Flange / Chassis mount with bolt-down thermal pad Flanged / Screw-mount with ceramic body
Packaging Tape & Reel (suffix HR3) —
Technology Lateral DMOS (LDMOS) N-Channel LDMOS
RoHS Durumu Compliant per Freescale/NXP material declaration Compliant (per NXP product page)
Device Type — RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)
Operating Frequency Range — 1930 MHz to 1990 MHz
Output Power (P1dB, Avg) — 22 W (N-CDMA Average)
Power Gain — 16.1 dB (typical at 1.99 GHz)
Drain Voltage (Vds) — 28 V
Quiescent Drain Current (Idq) — 900 mA (typical)
Lead Style — Dual blade (HR3 suffix)
Operating Mode — Class AB (linear)
Target Applications — N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL

Dökümanlar & Kaynaklar

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