MRF6S9045NR1 vs MRF9030MBR1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S9045NR1 sa pamamagitan ng NXP Semiconductors at MRF9030MBR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF6S9045NR1 MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 ✓ Nakahanda
NXP Semiconductors
MRF9030MBR1 MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale

MRF9030MBR1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MRF6S9045NR1 MRF9030MBR1
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor LDMOS, N-Channel Enhancement-Mode N-Channel Enhancement-Mode Lateral MOSFET
Technology Lateral MOSFET (RF Power) —
Drain-Source Voltage (VDS) Rated 68 V —
Operating Drain Voltage (VDD) 28 V (typical) —
Continuous Drain Current (ID) 10 uA (rated) —
Quiescent Current (IDQ) 350 mA —
Output Power (Pout) 10 W Avg. —
Operating Frequency 880 MHz (up to 1000 MHz) —
Power Gain 22.7 dB —
Drain Efficiency [DATA_NEEDED: typical efficiency percentage at Pout=10W] —
Packhaging / Kaso TO-270-2 (Case 1265-09, Style 1) —
Uri ng Pagpapasok Surface Mount Surface Mount (flanged ceramic)
Lead-Free / RoHS Yes (N suffix = lead-free terminations) —
VSWR Ruggedness Infinite VSWR at rated VDD —
Application 880 MHz Single-Carrier N-CDMA Base Station PA Broadband RF power amplifier / large-signal common-source amplifier
Manufacturer Freescale Semiconductor (acquired by NXP) NXP Semiconductors (formerly Freescale / Motorola)
Part Family — RF Sub-Micron MOSFET Line
Configuration — Single, common-source
Typical Output Power — 30 W at 945 MHz
Operating Frequency Range — DC to 1000 MHz
Power Gain (typical) — 20 dB
Drain-Source Voltage (Vds) Rating — 26 V
Typical Bias Current — 250 mA
Packhaging — TO-272-2 (ceramic, 2-lead flanged)
Maximum Dissipation (per Partstack) — 139 W
Level ng Sensitivity sa Asid ng Moisture (MSL) — 3
Polarity / Channel Mode — N-Channel, enhancement-mode
Tindminan RoHS — [DATA_NEEDED: RoHS compliance status from manufacturer page]

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita