MRF6S9045NR1 vs MRF9030MBR1 比較
詳細並排比較 MRF6S9045NR1 由 NXP Semiconductors 與 MRF9030MBR1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF6S9045NR1 | MRF9030MBR1 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | LDMOS, N-Channel Enhancement-Mode | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral MOSFET (RF Power) | — |
| Drain-Source Voltage (VDS) Rated | 68 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Continuous Drain Current (ID) | 10 uA (rated) | — |
| Quiescent Current (IDQ) | 350 mA | — |
| Output Power (Pout) | 10 W Avg. | — |
| Operating Frequency | 880 MHz (up to 1000 MHz) | — |
| Power Gain | 22.7 dB | — |
| Drain Efficiency | [DATA_NEEDED: typical efficiency percentage at Pout=10W] | — |
| 封裝 / 外殼 | TO-270-2 (Case 1265-09, Style 1) | — |
| 安裝類型 | Surface Mount | Surface Mount (flanged ceramic) |
| Lead-Free / RoHS | Yes (N suffix = lead-free terminations) | — |
| VSWR Ruggedness | Infinite VSWR at rated VDD | — |
| Application | 880 MHz Single-Carrier N-CDMA Base Station PA | Broadband RF power amplifier / large-signal common-source amplifier |
| Manufacturer | Freescale Semiconductor (acquired by NXP) | NXP Semiconductors (formerly Freescale / Motorola) |
| Part Family | — | RF Sub-Micron MOSFET Line |
| Configuration | — | Single, common-source |
| Typical Output Power | — | 30 W at 945 MHz |
| Operating Frequency Range | — | DC to 1000 MHz |
| Power Gain (typical) | — | 20 dB |
| Drain-Source Voltage (Vds) Rating | — | 26 V |
| Typical Bias Current | — | 250 mA |
| 封裝 | — | TO-272-2 (ceramic, 2-lead flanged) |
| Maximum Dissipation (per Partstack) | — | 139 W |
| 濕度敏感等級 (MSL) | — | 3 |
| Polarity / Channel Mode | — | N-Channel, enhancement-mode |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS compliance status from manufacturer page] |