MRF6V14300HR5 vs MRF6V14300HSR5 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6V14300HR5 sa pamamagitan ng NXP Semiconductors at MRF6V14300HSR5 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP
MRF6V14300HR5 ✓ NakahandaNXP Semiconductors
MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP
MRF6V14300HSR5 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF6V14300HR5 | MRF6V14300HSR5 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Uri ng Transistor | N-Channel Lateral RF Power MOSFET (LDMOS-family) | LDMOS, N-Channel, RF Power |
| Packhaging / Kaso | NI-780H-2L (push-pull ceramic flange) | — |
| Drain-Source Voltage (Vdss) | 50 V | — |
| Drain Current (Id) | 150 mA (typical pulsed bias) | — |
| Operating Frequency | 1.4 GHz (characterized 1200-1400 MHz) | — |
| Output Power (Pout) | 330 W pulsed | — |
| Power Gain (Gps) | 18 dB typical | — |
| Duty Cycle | 1% to 12% | 1% to 12% (pulsed) |
| Configuration | Single, push-pull | — |
| Channel Type | N-Channel enhancement mode | — |
| Number of Elements | 1 | — |
| Peak Reflow Temperature | 260 C (max 40 s) | — |
| Maximum Operating Temperature | 225 C | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Uri ng Pagpapasok | Chassis / screw-mount (NI-780H ceramic flange) | Surface Mount / Flange Mount |
| Technology | — | Lateral N-Channel MOSFET (LDMOS) |
| Family | — | VHV6 (Very High Voltage, 6th generation) |
| Drain-Source Voltage (Vds) Rated | — | 100 V |
| Operating Drain Voltage (Test) | — | 50 V |
| Operating Frequency Range | — | 1200 MHz to 1400 MHz |
| Typical Test Frequency | — | 1.4 GHz |
| Peak Output Power | — | 330 W (pulsed) |
| Typical Power Gain | — | 18 dB at 1.4 GHz |
| Quiescent Current (Idq) | — | 150 mA |
| Packhaging | — | NI-780S (SOT1793), 3-pin ceramic |
| Lead Free Status | — | Lead Free (per NXP product page) |