MRF6V2150NBR5 vs SRF7S27125HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6V2150NBR5 sa pamamagitan ng NXP Semiconductors at SRF7S27125HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
SRF7S27125HSR3 - 125W RF Power LDMOSFET, 27V | NXP Semiconductors
SRF7S27125HSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF6V2150NBR5 | SRF7S27125HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel Enhancement-Mode Lateral RF Power MOSFET | — |
| Drain-Source Voltage (VDS) | 110 V | 27 V (typical operating) |
| Drain-Source Voltage (VDSS, max) | 110 V | — |
| Operating Drain Voltage (VDD) | 50 V | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: ID max] | — |
| Output Power (POUT, CW) | 150 W | — |
| Operating Frequency Range | 10 MHz to 450 MHz | — |
| Power Gain (Gps) | 25 dB | — |
| Drain Efficiency (typ) | [DATA_NEEDED: drain efficiency %] | — |
| Packhaging | TO-272 WB-4 (TO-272W, 5-pin, ceramic, bolt-down) | NI-880S ceramic flange-mount |
| Uri ng Pagpapasok | Chassis/Surface Mount (bolt-down with ceramic insulator) | Flange-mount, bolt-down (2 tabs) |
| Configuration | Single-ended, unmatched | — |
| Mode of Operation | CW (continuous wave), large-signal | CW (continuous wave) capable |
| Level ng MSL | Not applicable (hermetic ceramic package) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | — |
| Hanay ng Temperature na Operasyon | -40 C to +150 C (TJ max 200 C) | — |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Product Type | — | RF Power LDMOSFET |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Output Power (CW) | — | 125 W |
| Frequency Band | — | UHF (470 MHz to 860 MHz typical) |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Polarity | — | N-Channel |
| Application Domain | — | UHF broadcast transmitter PA, industrial RF |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Thermal Resistance | — | [DATA_NEEDED: RthJC value] |
| Lead-Free / RoHS | — | [DATA_NEEDED: RoHS compliance status] |
| Input Matching | — | Internal, broadband |
| ESD Protection | — | Integrated |
| Gain (typical) | — | [DATA_NEEDED: gain at operating frequency] |
| Drain Efficiency | — | [DATA_NEEDED: typical drain efficiency] |