MRF8P23160WHSR3 vs MRF8P26080HSR3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF8P23160WHSR3 sa pamamagitan ng NXP Semiconductors at MRF8P26080HSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP
MRF8P26080HSR3 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MRF8P23160WHSR3 | MRF8P26080HSR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | RF Transceivers | MOSFETs |
| Katayuan ng Lifecycle | Obsolete | Aktibo |
| Manufacturer | NXP USA Inc. (formerly Freescale Semiconductor) | — |
| Uri ng Transistor | N-Channel LDMOS RF Power MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Operating Mode | Enhancement Mode | — |
| Frequency Range | 2300 to 2400 MHz | 2500 MHz to 2700 MHz |
| Test Frequency | 2.32 GHz | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 65 V | — |
| Test Voltage (VDD) | 28 V | — |
| Power Gain | 14.1 dB | — |
| Average Output Power (P1dB / W-CDMA) | 30 W | — |
| Peak Output Power | 160 W | — |
| Quiescent Drain Current (IDQA) | 600 mA | — |
| Package Type | NI-780-4 (CASE 465M-01), ceramic flangeless | — |
| Number of Terminals | 4 | — |
| Style ng Pagpapasok | Surface Mount (SMD flat lead) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40C to +150C (junction) |
| Technology | HV8 Lateral LDMOS | Gen8 LDMOS (Silicon, Lateral) |
| Configuration | Single (Doherty-ready) | — |
| Application | Base Station / Macro Cell Power Amplifier | — |
| Tindminan RoHS | Compliant | — |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | [DATA_NEEDED: MSL rating] | — |
| Average Output Power (P3dB) | — | 14 W (W-CDMA, single-carrier) |
| Peak Output Power (CW) | — | 80 W |
| Drain-Source Voltage (VDSS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Mode | — | Typical Doherty Single-Carrier W-CDMA |
| Application Class | — | Class AB or Class C capable |
| Modulation Formats | — | W-CDMA, LTE, OFDM, multi-carrier |
| Packhaging | — | NI-780S-4 (ceramic, flange-mount, air-cavity) |
| Uri ng Pagpapasok | — | Through-hole flange-mount with screw attachment |
| Lead Finish | — | Gold-plated (NiPdAu) |
| Lead-Free / RoHS | — | Compliant |