MRF8P23160WHSR3 vs MRF8P26080HSR3 比較

詳細並排比較 MRF8P23160WHSR3 由 NXP Semiconductors 與 MRF8P26080HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF8P23160WHSR3 MRF8P23160WHSR3 - 160W RF Power MOSFET 2.3-2.4GHz | NXP

MRF8P23160WHSR3 - 160W RF Power MOSFET 2.3-2.4GHz | NXP

MRF8P23160WHSR3 Obsolete
NXP Semiconductors
MRF8P26080HSR3 MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 ✓ 啟用中

規格比較

參數 MRF8P23160WHSR3 MRF8P26080HSR3
品牌 NXP Semiconductors NXP Semiconductors
類別 RF Transceivers MOSFETs
生命週期狀態 Obsolete 啟用中
Manufacturer NXP USA Inc. (formerly Freescale Semiconductor) —
電晶體類型 N-Channel LDMOS RF Power MOSFET N-Channel Enhancement-Mode Lateral MOSFET
Operating Mode Enhancement Mode —
Frequency Range 2300 to 2400 MHz 2500 MHz to 2700 MHz
Test Frequency 2.32 GHz —
V(BR)DSS (Drain-Source Breakdown Voltage) 65 V —
Test Voltage (VDD) 28 V —
Power Gain 14.1 dB —
Average Output Power (P1dB / W-CDMA) 30 W —
Peak Output Power 160 W —
Quiescent Drain Current (IDQA) 600 mA —
Package Type NI-780-4 (CASE 465M-01), ceramic flangeless —
Number of Terminals 4 —
安裝方式 Surface Mount (SMD flat lead) —
工作溫度範圍 [DATA_NEEDED: operating temperature range] -40C to +150C (junction)
Technology HV8 Lateral LDMOS Gen8 LDMOS (Silicon, Lateral)
Configuration Single (Doherty-ready) —
Application Base Station / Macro Cell Power Amplifier —
RoHS 狀態 Compliant —
濕度敏感等級 (MSL) [DATA_NEEDED: MSL rating] —
Average Output Power (P3dB) — 14 W (W-CDMA, single-carrier)
Peak Output Power (CW) — 80 W
Drain-Source Voltage (VDSS max) — 65 V
Operating Drain Voltage (VDD) — 28 V nominal
Test Mode — Typical Doherty Single-Carrier W-CDMA
Application Class — Class AB or Class C capable
Modulation Formats — W-CDMA, LTE, OFDM, multi-carrier
封裝 — NI-780S-4 (ceramic, flange-mount, air-cavity)
安裝類型 — Through-hole flange-mount with screw attachment
Lead Finish — Gold-plated (NiPdAu)
Lead-Free / RoHS — Compliant

資料表與資源

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